Ti/ p-Si Schottky Diyot Parametrelerinin Belirlenmesi için I – V Yöntemlerinin Karşılaştırılması

Ti/p-Si Schottky diyotun elektriksel özellikleri 80 K- 300 K sıcaklık aralığında ve 20 K’lik adımlarla sıcaklığın bir fonksiyonu olarak incelenmiştir. İdealite faktörü (n), engel yüksekliği (Фb) ve seri direnç (Rs) gibi temel diyot parametreleri akım-gerilim (I-V) karakteristiği özelliklerinden faydalanarak geleneksel I-V yöntemi, Norde yöntemi ve Cheung fonksiyonlarından hesaplanmıştır. 300 K sıcaklığında engel yüksekliği değerleri I-V, Cheung ve Norde yöntemlerinden sırasıyla 0.738 eV, 0.658 eV ve 0.782 eV olarak bulunmuştur. İdealite faktörü ise I-V yöntemde 1.43 (300 K) ve Cheung yönteminde 3.33 (300 K) olarak hesaplanmıştır. 80 K- 300 K sıcaklık aralığında farklı yöntemlerden hesaplanan parametrelerin değerleri birbiriyle kıyaslanmıştır. Artan sıcaklık ile idealite faktörünün azalması ve engel yüksekliğinin artması, diyot parametrelerinin sıcaklığa güçlü bir şekilde bağlı olduğunu göstermektedir.

Anahtar Kelimeler:

Schottky diyot, Engel yüksekliği, Norde fonksiyonu, Cheung- Cheung fonksiyonları, I-V yöntem, Sıcaklık bağlılık

Comparison of I – V Methods for Determination of Ti/ p-Si Schottky Diode Parameters

The electrical properties of the Ti/p-Si Schottky diode were investigated as a function of temperature within the temperature interval of 80 K-300 K and in 20 K steps. Fundamental diode parameters such as ideality factor (n), barrier height (Фb) and series resistance (Rs) were calculated making use of the conventional I-V method, the Norde method and Cheung functions by utilizing the current-voltage (I-V) characteristics. The barrier height values at 300 K temperature were found to be 0.738 eV, 0.658 eV and 0.782 eV from I-V, Cheung and Norde methods, respectively. The ideality factor was calculated as 1.43 (300 K) in the I-V method and 3.33 (300 K) in the Cheung method. The values of the parameters calculated from different methods in the temperature range of 80 K- 300 K were compared with each other. The decrease in ideality factor and increase in barrier height with increasing temperature show that diode parameters are strongly dependent on temperature

Keywords:

Schottky diode, Barrier height, Norde function, Cheung-Cheung functions, I-V method, Temperature dependence,

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