Ömer AKPINAR, Ahmet BİLGİLİ, Mustafa ÖZTÜRK, Süleyman ÖZÇELİK

AlInN/AlN HEMT’in Detaylı Optik Özellikleri

Bu çalışmada, Metal Organik Kimyasal Buhar Biriktirme (MOCVD) tekniği ile c-yönelimli safir üzerinde büyütülen AlInN/AlN yüksek elektron hareketli transistör (HEMT) yapısının optik özellikleri incelenmiştir. Optik karakterizasyon Kubelka-Munk yöntemiyle yapılmıştır. Geçirgenlik, absorbans, yansıma detaylı olarak incelenmiştir. Ayrıca özel fonksiyonlar kullanarak InN'nin yasak enerji bant aralığını belirlemek için Kubelka-Munk teorisinden yararlanılmıştır. Bu yöntemle elde edilen enerji bant aralığının karşılaştırılması yapılmıştır.

Anahtar Kelimeler:

MOCVD, HEMT, AlInN/InN, Geçirgenlik, Kubelka-Munk Metodu, Mobilite

Optical Properties of AlInN/AlN HEMTs in Detail

In this study, the optical properties of AlInN/AlN high electron mobility transistor (HEMT) structure, grown on c-oriented sapphire with Metal-Organic Chemical Vapor Deposition (MOCVD) technique, being investigated. Optical characterization is made Kubelka- Munk method. Transmittance, absorbance, and reflectance are investigated in detail. Also, the Kubelka-Munk theory is employed to determine the forbidden energy band gap of InN by using special functions. The energy band gap obtained by this method was compared.

Keywords:

MOCVD, HEMT, AlInN/InN, Transmittance, Kubelka-Munk Method, Mobilite,

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